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DCR1673SZ
DCR1673SZ
Phase Control Thyristor
Supersedes October 2000 version, DS4650-6.0 DS4650-7.0 July 2001
FEATURES
s Double Side Cooling s High Surge Capability s High Mean Current s Fatigue Free
KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2800V 5088A 83000A 1000V/s 250A/s
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC Motor Control
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 2800 2700 2600 2500 2400 Conditions
DCR1673SZ28 DCR1673SZ27 DCR1673SZ26 DCR1673SZ25 DCR1673SZ24
Tvj = 0 to 125C, IDRM = IRRM = 500mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively
Outline type code: Z. See Package Details for further information. Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1673SZ27 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DCR1673SZ
CURRENT RATINGS
Tcase = 60C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 5088 7995 7280 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 3300 5180 4350 A A A
CURRENT RATINGS
Tcase = 80C unless stated otherwise Symbol Double Side Cooled IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 3990 6320 5570 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IT(AV) IT(RMS) IT Mean on-state current RMS value Continuous (direct) on-state current Half wave resistive load 2540 3980 3250 A A A
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DCR1673SZ
SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 66.4 22.0 x 106 83.0 34.4 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 83.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 74.0 125 125 91.0
o
Min. dc Anode dc -
Max. 0.0065 0.013 0.013 0.001 0.002 135
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
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DCR1673SZ
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC From 67% VDRM to 1100A Gate source 1A tr = 0.5s, Tj = 125oC At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 20V, 10 tr = 0.5s, Tj = 25oC Tj = 25oC, VD = 5V Tj = 25oC, Rg-k = Repetitive 50Hz Non-repetitive Typ. 1.0 150 40 Max. 500 1000 250 500 0.82 0.076 1.5 750 200 Units mA V/s A/s A/s V m s mA mA
dI/dt
Rate of rise of on-state current
VT(TO) rT tgd IL IH
Threshold voltage On-state slope resistance Delay time Latching current Holding current
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode See table, gate characteristics curve Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Max. 3.5 500 0.25 30 0.25 5 30 150 10 Units V mA V V V V A W W
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DCR1673SZ
CURVES
10000
10000
Measured under pulse conditions Tj = 125C
d.c. Halfwave 3 phase 6 phase
8000
8000
Mean power dissipation - (W)
Instantaneous on-state current, IT - (A)
6000
6000
4000
4000
2000
2000
0 0.5
1.0 1.5 Instantaneous on-state voltage, VT - (V)
2.0
0 0
2000 4000 6000 Mean on-state current, IT(AV) - (A)
8000
Fig.2 Maximum (limit) on-state characteristics VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT A = 0.4769404 B = 0.02958434 C = 3.978298 x 10-5 D = 6.677479 x 10-3 these values are valid for Tj = 125C for IT 500A to 10000A Where
Fig.3 Dissipation curves
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DCR1673SZ
100000 Tj = 125C
100
Table gives pulse power PGM in Watts
Pulse Width s 100 200 500 1ms 10ms Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 400 150 125 100 25 -
VFGM
Recovered charge Qr - (C)
Gate trigger voltage, VGT - (V)
IT = 3000A
100W 50W 20W 10W
10
10000
1
U
e pp
rL
im
it
99
%
Tj = 25C
VGD
Lo
IGD
w
L er
im
it 1
%
1000 1
10 Rate of decay of on-state current, dI/dt - (A/s)
100
0.1 0.001
IFGM
0.01 0.1 1.0 Gate trigger current, IGT - (A)
10
Fig.4 Recovered charge
200
0.1
Fig.5 Gate characteristics
Peak half sinewave on-state current - (kA)
150
30
Anode side cooled
Thermal impedance - (C/W)
0.01 Double side cooled
I2t value for fusing - (A2s x 106)
100
20
I2t 50 10
0.001
Conduction
Effective thermal resistance Junction to case C/W Double side 0.0065 0.0072 0.0073 0.0076 Anode side 0.0130 0.0137 0.0138 0.0141
0.0001 0.001
d.c. Halfwave 3 phase 120 6 phase 60
0 1
100
10 ms
1
5
10
0 50
0.01
0.1 Time - (s)
1
10
Cycles at 50Hz Duration
Fig.6 Transient thermal impedance - junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125C)
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DCR1673SZ
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes O3.6 0.5 depth 2.0 (One in each electrode)
Gate tab Cathode tab
Cathode O151 max O100 37.5 max
O100 O148 max Anode
Nominal weight: 2800g Clamping force: 83kN 10% Lead length: 500mm Lead terminal connector: M4 ring Package outline type code: Z
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4650-7 Issue No. 7.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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